Non-ferromagnetic spacing composite layer, its method, synthetic antiferromagnetic laminated structure, and magnetoresistive random access memory

A non-ferromagnetic spacing composite layer for a synthetic antiferromagnetic laminated structure, comprising a first spacing layer, a second spacing layer, and a third spacing layer, the second spacing layer disposed between the first spacing layer and the third spacing layer;

• wherein the first spacing layer and the third spacing layer each independently comprise a material selected from the group consisting of:
• rhenium, rhodium, iridium, tungsten, molybdenum, tantalum, niobium, and any combinations thereof, and the second spacing layer comprises a material of ruthenium;
• and
• wherein a thickness of the second spacing layer is more than or equal to 0.18 nanometers (nm), and a total thickness of the first spacing layer, the second spacing layer, and the third spacing layer is more than or equal to 0.6 nm and less than or equal to 1 nm.