Transverse bias strength enhancement in dual free layer tunnel magnetoresistive read heads

A sensing element, comprising:

• a dual free layer (DFL) sensor;
• a read hard bias (RHB) structure;
• and
• a multilayer insulating structure coupled between the DFL sensor and a first surface of the RHB structure, wherein the multilayer insulating structure comprises at least one layer that is chemically compatible to a tunnel magnetoresistive (TMR) barrier and capable of functioning as a TMR insulation layer, and wherein each layer of the multilayer insulating structure extends along the first surface of the RHB structure and a second surface of the RHB structure disposed substantially perpendicular to the first surface.

A magnetic read head, comprising:

• a first shield;
• a middle shield;
• a second shield;
• a first sensor disposed between the first shield and the middle shield;
• a second sensor disposed between the middle shield and the second shield;
• at least one first rear hard bias (RHB) structure disposed between the first shield and the second shield;
• and
• a first multilayer insulating structure comprising at least one layer that is chemically compatible to a tunnel magnetoresistive (TMR) barrier and capable of functioning as a TMR insulation layer, wherein each layer of the first multilayer insulating structure is disposed between the at least one first RHB structure and the first sensor and sandwiched between the at least one first RHB structure and the first shield.