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US 11,167,981 B2Granted
Semiconductor device and method of producing a semiconductor device
AssigneeFraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
InventorsSabine Trupp, Michael Henfling, Karl Neumeier
Life of this patent
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Abstract
A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.
Claims11
A semiconductor device comprising:
- a semiconductor substrate;
- wherein the semiconductor substrate comprises a plurality of integrated circuit configurations;
- wherein the integrated circuit configurations comprise a layer which includes a porous matrix structure,
- wherein a functionalization substance is introduced into the porous matrix structure,
- wherein the functionalization substance is a sensor material, and wherein the sensor material exhibits a property which depends on a state of a fluid which is in contact with the sensor material,
- wherein the integrated circuit configurations comprise an optically sensitive area, wherein the porous matrix structure is arranged in a direction of incident light of the optically sensitive area,
- wherein the sensor material is configured to influence an electric signal of the optically sensitive area on the basis of a state of the fluid, and wherein the semiconductor device is configured to sense a state of the fluid on the basis of the influence exerted on the electric signal, and
- wherein the optically sensitive area is configured to receive light through the porous matrix structure, wherein the light undergoes an absorption through the sensor material in the porous matrix structure on the basis of a state of the fluid.
5 more elements
A semiconductor device structure comprising:
- a semiconductor substrate;
- wherein the semiconductor substrate comprises a plurality of integrated circuit configurations;
- wherein the integrated circuit configurations comprise a layer which includes a porous matrix structure,
- wherein a functionalization substance is introduced into the porous matrix,
- wherein the functionalization substance is a sensor material, and wherein the sensor material exhibits a property which depends on a state of a fluid which is in contact with the sensor material,
- wherein the integrated circuit configurations comprise an optically sensitive area, wherein the porous matrix structure is arranged in a direction of incident light of the optically sensitive area, and
- wherein the sensor material is configured to influence an electric signal of the optically sensitive area on the basis of a state of the fluid, and wherein the semiconductor device is configured to sense a state of the fluid on the basis of the influence exerted on the electric signal, and
- wherein the optically sensitive area is configured to receive light, the light undergoing a refraction within the porous matrix structure on the basis of a state of the fluid, and the semiconductor device being configured to sense the state or a state of the fluid on the basis of said refraction.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- wherein the semiconductor substrate comprises a plurality of integrated circuit configurations;
- wherein the integrated circuit configurations comprise a layer which includes a porous matrix structure,
- wherein a functionalization substance is introduced into the porous matrix structure,
- wherein the functionalization substance is configured to perform bonding with a further porous matrix structure, said further porous matrix structure being loaded with the functionalization substance.
2 more elements
Dependencies are inferred from the claim text.