Method of manufacturing display panel
AssigneeShenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
InventorJiexin Zheng
Life of this patent
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Abstract
The disclosure provides a method of manufacturing a display panel, including: sequentially forming a buffer layer, an oxide semiconductor layer, and a photoresist layer on a substrate; removing the photoresist layer corresponding to a gate defining region to obtain a photoresist section; forming a first metal layer on the photoresist layer and the oxide semiconductor layer which is not covered by the photoresist layer; and peeling off the photoresist section to remove the first metal layer on the photoresist section, wherein the first metal layer which corresponds to the gate defining region remains to obtain a gate.
Claims18
A method of manufacturing a display panel, comprising:
- sequentially forming a buffer layer and an oxide semiconductor layer on a substrate;
- forming a photoresist layer on the oxide semiconductor layer, patterning the photoresist layer, and removing the photoresist layer corresponding to a gate defining region to obtain a photoresist section, wherein material of the photoresist layer is a negative photoresist material;
- sequentially forming a first insulating layer and a first metal layer on the photoresist layer and the oxide semiconductor layer which is not covered by the photoresist layer;
- and
- peeling off the photoresist section to remove the first insulating layer and the first metal layer on the photoresist section, wherein the first insulating layer and the first metal layer which correspond to the gate defining region are remained to respectively obtain a gate insulating layer and a gate.
A method of manufacturing a display panel, comprising:
- sequentially forming a buffer layer and an oxide semiconductor layer on a substrate;
- forming a photoresist layer on the oxide semiconductor layer, patterning the photoresist layer, and removing the photoresist layer corresponding to a gate defining region to obtain a photoresist section;
- forming a first metal layer on the photoresist section and the oxide semiconductor layer which is not covered by the photoresist layer;
- and
- peeling off the photoresist section to remove the first metal layer on the photoresist section, wherein the first metal layer which corresponds to the gate defining region is remained to obtain a gate.
Dependencies are inferred from the claim text.