Circuit carrier structure and manufacturing method thereof

A manufacturing method of a circuit carrier structure, comprising:

• providing a temporary carrier;
• forming a first metal material layer on the temporary carrier;
• forming a first heat dissipating pattern on the first metal material layer;
• providing an inner circuit structure, the inner circuit structure having a first surface and a second surface opposite to the first surface;
• disposing a first dielectric layer on the first surface;
• performing a lamination process to bond the temporary carrier, and the first heat dissipating pattern and the first metal material layer on the temporary carrier to the first surface of the inner circuit structure, wherein the first heat dissipating pattern is embedded in the first dielectric layer;
• removing the temporary carrier;
• performing a drilling process to form a plurality of first openings in the first dielectric layer;
• forming a first conductive material layer on the first dielectric layer, the first conductive material layer is disposed in the first openings and covering the first metal material layer;
• and
• patterning the first conductive material layer and the first metal material layer to respectively form a second heat dissipating pattern and an interlayer metal layer, and the first heat dissipating pattern, the second heat dissipating pattern, and the interlayer metal layer forming a heat dissipating structure,
• wherein the second heat dissipating pattern is disposed corresponding to the first heat dissipating pattern, and the interlayer metal layer is located between the first heat dissipating pattern and the second heat dissipating pattern,
• wherein an orthographic projection area of the interlayer metal layer on the first surface substantially aligns with an orthographic projection area of the second heat dissipating pattern on the first surface.