Protection circuit, oscillation compensation circuit and power supply circuit in solid state pulse modulator
AssigneeNuctech Company Limited
InventorsYaohong Liu, Ziran Zhao, Jinsheng Liu, Wei Jia, Wei Li, Xinshui Yan
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Abstract
The disclosed technology relates to a gate protection circuit for an Insulated Gate Bipolar Transistor (IGBT), the IGBT being used as a switch device in a solid state pulse modulator based on the MARX generator principle, the gate protection circuit including: a voltage regulator configured to supply a stable voltage to an emitter of the IGBT with respect to the ground for a gate of the IGBT.
Claims19
A solid state pulse modulator based on the Marx generator principle, comprising a gate protection circuit for an Insulated Gate Bipolar Transistor (IGBT), the IGBT being used as a switch device in a solid state pulse modulator based on the Marx generator principle, the gate protection circuit comprising:
- a voltage regulator configured to supply a stable voltage to an emitter of the IGBT with respect to ground for a gate of the IGBT;
- wherein the voltage regulator is a voltage regulation diode having a cathode connected to the emitter of the IGBT and an anode connected to the ground for the gate of the IGBT.
Dependencies are inferred from the claim text.