Semiconductor laser device, chip on submount, and semiconductor laser module
AssigneeFurukawa Electric Co., Ltd.
InventorsEisaku Kaji, Yutaka Ohki
Life of this patent
Estimating the term…
Abstract
A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.
Claims20
A semiconductor laser device of an edge emission type, the semiconductor laser device comprising:
- a multi-mode waveguide;
- a first facet of the multi-mode waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the multi-mode waveguide;
- and
- a second facet of the multi-mode waveguide on an emission direction rear side, the second facet having the first width, wherein
- a width of the multi-mode waveguide, in the horizontal direction, is at least partially narrower than the first width, in a region between the first facet and the second facet,
- the region between the first facet and the second facet is 80% or less of a total length of the multi-mode waveguide, and a length of the fist facet is equal to or longer than a processing accuracy length at a time of cutting the emission direction front side,
- a length of the second facet is at least 5 μm and longer than a processing accuracy at a time of cleaving the emission direction rear side, and
- a width of the first facet at the emission direction front facet and the width of the second facet at the emission direction rear side are substantially the same.
A semiconductor laser device of an edge emission type, the semiconductor laser device comprising:
- a multi-mode waveguide;
- a first facet of the multi-mode waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the multi-mode waveguide;
- and
- a second facet of the multi-mode waveguide on an emission direction rear side, the second facet having the first width;
- and
- a current injection region from which current is injected into the multi-mode waveguide, the current injection region having a width, in the horizontal direction, that is at least partially narrower, in a region between the first facet on an emission direction front side and the second facet on an emission direction rear side, than a width, in the horizontal direction, of another region of the current injection region,
- wherein the region between the first facet and the second facet is 80% or less of a total length of the multi-mode waveguide, and a length of the fist facet is equal to or longer than a processing accuracy length at a time of cutting the emission direction front side,
- a length of the second facet is at least 5 μm and longer than a processing accuracy at a time of cleaving the emission direction rear side, and
- a width of the first facet at the emission direction front facet and the width of the second facet at the emission direction rear side are substantially the same.
A semiconductor laser device of an edge emission type, the semiconductor laser device comprising:
- a multi-mode waveguide;
- a current injection region from which current is injected into the multi-mode waveguide, the current injection region having a width narrower than the multi-mode waveguide in a horizontal direction perpendicular to a longitudinal direction of the multi-mode waveguide, the current injection region being 80% or less of a total length of the multi-mode waveguide, portions of the multi-mode waveguide other than the current injection region being a same width;
- and
- a coverage region having a coverage width obtained by dividing, by two, a result of subtracting the width of the current injection region from a width of the multi-mode waveguide in the horizontal direction, the coverage width being at least partially wider than 5 μm, between a first facet of the multi-mode waveguide on an emission direction front side and a second facet of the multi-mode waveguide on an emission direction rear side.
Dependencies are inferred from the claim text.