US 11,152,247 B2 · Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device is provided in which a zener diode having a desired breakdown voltage and a capacitor in which voltage dependence of capacitance is reduced are mounted together, and various circuits are realized. The semiconductor device includes: a semiconductor layer; a first conductivity type well that is arranged in a first region of the semiconductor layer; a first conductivity type first impurity diffusion region that is arranged in the well; a first conductivity type second impurity diffusion region that is arranged in a second region of the semiconductor layer; an insulating film that is arranged on the second impurity diffusion region; an electrode that is arranged on the insulating film; and a second conductivity type third impurity diffusion region that is arranged at least on the first impurity diffusion region.

Claims3

Dependent claims

A manufacturing method of a semiconductor device, comprising:

forming a first conductivity type first well in a first region of a semiconductor layer;
forming a first conductivity type first impurity diffusion region in the first well, and simultaneously, forming a first conductivity type second impurity diffusion region in a second region of the semiconductor layer;
forming an insulating film in the second impurity diffusion region;
forming an electrode on the insulating film;
forming a second conductivity type third impurity diffusion region at least on the first impurity diffusion region;
and
forming, in the semiconductor layer and on a first conductivity type buried diffusion layer, a first conductivity type fourth impurity diffusion region that surrounds the first region of the semiconductor layer in plan view.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/906,597Filed 19 Jun 2020 · division

Priority

JP 2015-24205811 Dec 2015

Published

US 2020/0321239 A18 Oct 2020

Granted

19 Oct 2021

Term ends

Not estimatedThe source records don’t support an estimate.

Classification34 codes

H10W 10/30
Isolation regions in semiconductor bodies between components of integrated devices: isolation regions comprising PN junctions
H10D 1/047
Of capacitors having potential barriers, e.g. varactors: of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
H10D 1/66
Capacitors having potential barriers: conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
H10D 8/022
Of breakdown diodes: of Zener diodes

Family

Application15/365,790Parent of this division · filed 30 Nov 2016

US 2020/0321239 A1Pre-grant publication · published 8 Oct 2020

US 10,714,375 B2Parent of this division

US 2017/0170053 A1Published application

US 11,152,247 B2This patent

From the US filing history. Foreign family members aren’t listed.

Semiconductor device and manufacturing method thereof

Life of this patent

Semiconductor device and manufacturing method thereof

Life of this patent

Abstract

Claims3