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US 11,152,188 B2Granted
Nano vacuum tube
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHsien-Yu Chang
Life of this patent
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Abstract
A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.
Claims20
A semiconductor device, comprising:
- a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another;
- a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure;
- and
- at least one photodetector formed within a bottom portion of the tube-like structure.
1 more element
A semiconductor device, comprising:
- a bottom dielectric layer;
- at least one photodetector formed in the bottom dielectric layer;
- at least one intermediate dielectric layer formed over the bottom dielectric layer;
- a top dielectric layer formed over the at least one intermediate dielectric layer;
- a cap conductor formed over the top dielectric layer;
- a hollow space traversing the top dielectric layer, the at least one intermediate dielectric layer and the bottom dielectric layer;
- and
- a conductor tip extending downwardly from the cap conductor and into the hollow space.
5 more elements
A semiconductor device, comprising:
- a bottom dielectric layer;
- at least one photodetector formed in the bottom dielectric layer;
- a bottom conductor layer formed over the bottom dielectric layer;
- at least one intermediate dielectric layer formed over the bottom conductor layer;
- a top dielectric layer formed over the at least one intermediate dielectric layer;
- a top conductor layer formed over the top dielectric layer;
- a cap conductor formed over the top conductor layer;
- a hollow space traversing the top conductor layer, the top dielectric layer, the at least one intermediate dielectric layer, the bottom conductor layer and the bottom dielectric layer;
- and
- a conductor tip extending downwardly from the cap conductor and into the hollow space.
7 more elements
Dependencies are inferred from the claim text.