Strain tuning individual quantum dot emission frequencies with local phase transitions
AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorsJoel Q. Grim, Allan S. Bracker, Samuel Carter, Daniel Gammon
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Abstract
A technique is described to deterministically tune the emission frequency of individual semiconductor photon sources, for example quantum dots. A focused laser is directed at a film of material that changes form when heated (for example, a phase change material that undergoes change between crystal and amorphous forms) overlaid on a photonic membrane that includes the photon sources. The laser causes a localized change in form in the film, resulting in a change in emission frequency of a photon source.
Claims9
A method of tuning quantum emitters, comprising:
- providing a photonic membrane diode comprising a plurality of solid-state quantum emitters;
- depositing a film comprising HfO2 on the photonic membrane diode, wherein the film undergoes a change in form upon heating;
- and
- focusing a spot of laser light on the film with power sufficient to induce the change in form in the film,
- wherein the change in form causes a strain in the photonic membrane diode and thereby a change in emission frequency of at least one of the plurality solid-state quantum emitters that persists without need for continuing application of the laser light, and
- wherein the change in form comprises crystallization of the HfO2.
A method of tuning quantum emitters, comprising:
- providing a photonic membrane diode comprising a plurality of solid-state quantum emitters and a film comprising HfO2 overlaid on the photonic membrane diode, wherein the film undergoes a change in form upon heating;
- focusing a spot of laser light on the film with power sufficient to induce the change in form in the film,
- wherein the change in form causes a strain in the photonic membrane diode and thereby a change in emission frequency of at least one of the plurality solid-state quantum emitters that persists without need for continuing application of the laser light, and
- wherein the change in form comprises crystallization of the HfO2.
Dependencies are inferred from the claim text.