Electronic system and interposer having an embedded power device module

A processor interposer, comprising:

• an electrically insulating material having a first main side and a second main side opposite the first main side;
• a plurality of electrically conductive structures embedded in the electrically insulating material and configured to provide an electrical interface for a processor substrate at the first main side of the electrically insulating material and to provide electrical connections from the electrical interface to the second main side of the electrically insulating material;
• and
• a power device module embedded in the electrically insulating material and configured to convert a voltage provided at the second main side of the electrically insulating material to a lower voltage at the first main side of the electrically insulating material,
• wherein the power device module comprises at least one power switch embedded in the electrically insulating material,
• wherein the power device module further comprises a driver circuit embedded in the electrically insulating material and configured to drive the at least one power switch.

A processor interposer, comprising:

• an electrically insulating material having a first main side and a second main side opposite the first main side;
• a plurality of electrically conductive structures embedded in the electrically insulating material and configured to provide an electrical interface for a processor substrate at the first main side of the electrically insulating material and to provide electrical connections from the electrical interface to the second main side of the electrically insulating material;
• and
• a power device module embedded in the electrically insulating material and configured to convert a voltage provided at the second main side of the electrically insulating material to a lower voltage at the first main side of the electrically insulating material,
• wherein the electrically insulating material comprises a first layer in which the power device module is embedded and at least one additional layer formed on the first layer,
• wherein the power device module has at least one contact configured to receive the voltage provided at the second main side of the electrically insulating material,
• wherein the plurality of electrically conductive structures embedded in the electrically insulating material includes distribution circuitry configured to carry the lower voltage provided by the power device module to the first main side of the electrically insulating material.