Solid-state imaging element, imaging apparatus, and control method of solid-state imaging element
AssigneeSony Semiconductor Solutions Corporation
InventorsMasaki Sakakibara, Ryohei Kawasaki
Life of this patent
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Abstract
A solid-state imaging element that detects address events captures high-quality images. The solid-state imaging element includes a pixel array section that has a plurality of pixels including a specific pixel arranged in a two-dimensional lattice pattern. The specific pixel includes a pixel circuit and two analog-digital converters. The pixel circuit outputs two analog signals proportional to an amount of charge produced by photoelectric conversion. The analog-digital converters convert the respective two analog signals into digital signals with different resolutions.
Claims16
A solid-state imaging element, comprising:
- a pixel array section including a plurality of pixels in a two-dimensional lattice pattern, wherein the plurality of pixels includes a specific pixel that includes:
- a pixel circuit that includes:
- a photoelectric conversion section configured to convert light into charge;
- a current-voltage conversion section configured to generate a first analog signal by current-voltage conversion of a photocurrent that flows through the photoelectric conversion section;
- a discharge transistor configured to discharge the charge from the photoelectric conversion section based on a start of an exposure period;
- a floating diffusion layer;
- a transfer transistor configured to transfer the charge from the photoelectric conversion section to the floating diffusion layer based on an end of the exposure period, wherein the floating diffusion layer is configured to accumulate the transferred charge;
- and
- an amplifying transistor configured to amplify a voltage in the floating diffusion layer and output the amplified voltage as a second analog signal;
- a first analog-digital converter configured to convert the first analog signal into a first digital signal;
- and
- a second analog-digital converter configured to convert the second analog signal into a second digital signal, wherein a resolution of the first digital signal is different from a resolution of the second digital signal.
An imaging apparatus, comprising:
- a pixel array section including a plurality of pixels in a two-dimensional lattice pattern, wherein the plurality of pixels includes a specific pixel that includes:
- a pixel circuit that includes:
- a photoelectric conversion section configured to convert light into charge;
- a current-voltage conversion section configured to generate a first analog signal by current-voltage conversion of a photocurrent that flows through the photoelectric conversion section;
- a discharge transistor configured to discharge the charge from the photoelectric conversion section based on a start of an exposure period;
- a floating diffusion layer;
- a transfer transistor configured to transfer the charge from the photoelectric conversion section to the floating diffusion layer based on an end of the exposure period, wherein the floating diffusion layer is configured to accumulate the transferred charge;
- and
- an amplifying transistor configured to amplify a voltage in the floating diffusion layer and output the amplified voltage as a second analog signal;
- a first analog-digital converter configured to convert the first analog signal into a first digital signal;
- and
- a second analog-digital converter configured to convert the second analog signal into a second digital signal, wherein a resolution of the first digital signal is different from a resolution of the second digital signal;
- and
- a digital signal processing section configured to process image data that includes the first digital signal and the second digital signal.
A control method, comprising:
- in a solid-state imaging element that includes a pixel array section, wherein the pixel array section includes a plurality of pixels that includes a specific pixel, and the specific pixel includes a pixel circuit, a first analog-digital converter, and a second analog-digital converter:
- converting, by a photoelectric conversion section of the pixel circuit, light into charge;
- generating, by a current-voltage conversion section of the pixel circuit, a first analog signal by current-voltage conversion of a photocurrent that flows through the photoelectric conversion section;
- discharging, by a discharge transistor of the pixel circuit, the charge from the photoelectric conversion section based on a start of an exposure period;
- transferring, by a transfer transistor of the pixel circuit, the charge from the photoelectric conversion section to a floating diffusion layer of the pixel circuit based on an end of the exposure period;
- accumulating, by the floating diffusion layer, the transferred charge;
- amplifying, by an amplifying transistor of the pixel circuit, a voltage in the floating diffusion layer;
- outputting, by the amplifying transistor, the amplified voltage as a second analog signal;
- converting, by the first analog-digital converter, the first analog signal into a first digital signal;
- and
- converting, by the second analog-digital converter, the second analog signal into a second digital signal, wherein a resolution of the first digital signal is different from a resolution of the second digital signal.
A solid-state imaging element, comprising:
- a pixel array section including a plurality of pixels in a two-dimensional lattice pattern, wherein the plurality of pixels includes a specific pixel that includes:
- a pixel circuit configured to output a first analog signal and a second analog signal, wherein the first analog signal and the second analog signal are proportional to an amount of charge produced by photoelectric conversion;
- a first analog-digital converter configured to convert the first analog signal into a first digital signal;
- and
- a second analog-digital converter configured to convert the second analog signal into a second digital signal, wherein
- a resolution of the first digital signal is different from a resolution of the second digital signal,
- the first analog-digital converter has a lower resolution than the second analog-digital converter,
- the first analog-digital converter is further configured to detect, as an address event, that a variation in the amount of the charge has exceeded a threshold value, and
- the detection is based on the first analog signal.
Dependencies are inferred from the claim text.