Solid-state image sensing device

A solid-state image sensing device of a global-shutter type comprising:

• a plurality of unit pixels arranged in a matrix, each unit pixel including a photoelectric conversion element that generates and accumulates charge in a charge amount responsive to an incident light quantity and a memory that accumulates the charge transferred from the photoelectric conversion element, a vertical driving unit that performs a shutter operation and reads from the unit pixels an analog signal related to the charge amount of the charge accumulated on the memories, and
• an analog-to-digital (AD) converter that performs an analog-to-digital (AD) conversion on the analog signal read by the vertical driving unit, wherein the vertical driving unit performs the shutter operation during a time period from when the AD converter starts the AD conversion to when the AD converter ends the AD conversion, and
• wherein the AD converter does not output a digital signal during a time period from when the vertical driving unit starts the shutter operation to when the vertical driving unit ends the shutter operation,
• a storage unit that stores a plurality of the digital signals that are output by the AD converter each time when the AD converter performs the AD conversion, and
• a processor that performs signal processing on the digital signals that are output by the AD converter each time when the AD converter performs the AD conversion, wherein the AD converter suspends the AD conversion during the time period from when the vertical driving unit starts the shutter operation to when the vertical driving unit ends the shutter operation, and
• wherein the processor uses in the signal processing the digital signals serving as buffer data from among the digital signals stored on the storage unit, the digital signals serving as the buffer data corresponding to two rows or more of the unit pixels and scheduled to be generated during the time period while the AD converter suspends the AD conversion.