Back to results
US 11,146,040 B2Granted
Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element
AssigneesMeijo University, Stanley Electric Co., Ltd.
InventorsTetsuya Takeuchi, Isamu Akasaki, Kazuki Kiyohara, Masaru Takizawa, Ji-Hao Liang
Life of this patent
Estimating the term…
Abstract
Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.
Claims9
A semiconductor multilayer film reflecting mirror comprising:
- a substrate;
- and
- a semiconductor multilayer film which is formed on said substrate and which includes a plurality of first layers and a plurality of second layers which are stacked on each other in an alternating manner,
- wherein each of said first layers comprises a non-doped InAlN layer, and
- wherein each of said second layers comprises a GaN layer containing a dopant.
2 more elements
A vertical cavity light-emitting element comprising:
- a semiconductor structure layer including a first semiconductor layer having a first conductivity type, an active layer, and a second semiconductor layer having a second conductivity type opposite to said first conductivity type;
- and
- first and second reflecting mirrors opposite to each other with said semiconductor structure layer interposed therebetween,
- wherein:
- said first reflecting mirror comprises a semiconductor multilayer film which includes a plurality of first layers and a plurality of second layers which are stacked on each other in an alternating manner,
- wherein each of said first layers comprises a non-doped InAlN layer;
- and
- wherein each of said second layers comprises a GaN layer containing a dopant.
5 more elements
Dependencies are inferred from the claim text.