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US 11,145,835 B2Granted
Imaging device having a photoelectric conversion layer
AssigneeSony Corporation
InventorsToshiki Moriwaki, Toru Udaka
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Abstract
An imaging device is provided. The imaging device includes a semiconductor substrate; a first electrode disposed above the semiconductor substrate; a second electrode disposed above the first electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein a difference between a work function value of the first electrode and a work function value of the second electrode is 0.4 eV or more, and wherein the first electrode has a sheet resistance value of 3×10 Ω/□ to 1×103Ω/□.
Claims14
An imaging device, comprising:
- a semiconductor substrate;
- a first electrode disposed above the semiconductor substrate;
- a second electrode disposed above the semiconductor substrate;
- and
- a photoelectric conversion layer disposed between the first electrode and the second electrode,
- wherein the second electrode is provided between the first electrode and the semiconductor substrate,
- wherein a difference between a work function value of the first electrode and a work function value of the second electrode is 0.4 eV or more, and
- wherein the first electrode includes an amorphous oxide conductor including at least a quaternary compound of indium, zinc, gallium and oxygen or a quaternary compound of indium, zinc, aluminum and oxygen, and wherein the amorphous oxide conductor has a sheet resistance value of 3×10Ω/□1×103Ω/□.
5 more elements
Dependencies are inferred from the claim text.