Phase change memory with conductive bridge filament
AssigneeInternational Business Machines Corporation
InventorsNanbo Gong, Takashi Ando, Guy M. Cohen
Life of this patent
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Abstract
Methods and structures for fabricating a semiconductor device that includes a reduced programming current phase change memory (PCM) are provided. The method includes forming a bottom electrode. The method further includes forming a PCM and forming a conductive bridge filament in a dielectric to serve as a heater for the PCM. The method also includes forming a top electrode.
Claims17
A semiconductor device including a reduced programming current phase change memory (PCM), comprising:
- a bottom electrode;
- a deposited conductive bridge filament centrally positioned on the bottom electrode;
- and
- a pillar PCM device stack positioned on the conductive bridge filament, with the pillar PCM device stack including a PCM layer and a top electrode.
A semiconductor device including a reduced programming current phase change memory (PCM), comprising:
- a bottom contact;
- a reduced size bottom electrode;
- a conductive bridge filament in a silicon oxide (SiO2) dielectric positioned on the reduced size bottom electrode;
- a PCM, wherein the reduced size bottom electrode is connected to the PCM by the conductive bridge filament, with a top planar surface of the reduced size bottom electrode having an area equal to a bottom planar surface of the SiO2 dielectric and a smaller area than a bottom planar surface of the PCM;
- and
- a top electrode.
A semiconductor device including a reduced programming current phase change memory (PCM), comprising:
- a bottom electrode;
- a deposited conductive bridge filament centrally positioned on the bottom electrode;
- and
- a PCM device stack, including a PCM layer and a top electrode, positioned on the conductive bridge filament, with spacers around the PCM device stack.
Dependencies are inferred from the claim text.