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US 11,145,810 B2Granted
Memory device
AssigneeToshiba Memory Corporation
InventorHiroki Kawai
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a memory device includes a resistance change memory element including a first electrode, a second electrode, and an intermediate layer provided between the first electrode and the second electrode, containing germanium (Ge), tellurium (Te) and at least one element selected from lithium (Li) and sodium (Na), and at least a part of which being capable of exhibiting a crystalline state.
Claims20
A memory device comprising:
- a first interconnect;
- a second interconnect;
- and
- a memory cell provided between the first interconnect and the second interconnect,
- the memory cell comprising:
- a resistance change memory element including a layer containing germanium (Ge), tellurium (Te) and at least one element selected from lithium (Li) or sodium (Na), and at least a part of the layer being capable of exhibiting a crystalline state;
- and
- a selector element connected in series to the resistance change memory element, and selecting the resistance change memory element, the selector element being a two-terminal selector element having nonlinear current-voltage characteristics.
5 more elements
A memory device comprising:
- a first interconnect;
- a second interconnect;
- and
- a memory cell provided between the first interconnect and the second interconnect,
- the memory cell comprising:
- a resistance change memory element including a layer containing a compound expressed by LiGeTe2;
- and
- a selector element connected in series to the resistance change memory element, and selecting the resistance change memory element, the selector element being a two-terminal selector element having nonlinear current-voltage characteristics.
5 more elements
A memory device comprising:
- a first interconnect;
- a second interconnect;
- and
- a memory cell provided between the first interconnect and the second interconnect,
- the memory cell comprising:
- a resistance change memory element including a layer containing a compound expressed by Na8Ge4Te10;
- and
- a selector element connected in series to the resistance change memory element, and selecting the resistance change memory element, the selector element being a two-terminal selector element having nonlinear current-voltage characteristics.
5 more elements
Dependencies are inferred from the claim text.