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US 11,145,807 B2Granted
Electronic device
AssigneeSK hynix Inc.
InventorsJongkoo Lim, Gukcheon Kim, Soogil Kim, Jeongmyeong Kim
Life of this patent
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AssigneeSK hynix Inc.
InventorsJongkoo Lim, Gukcheon Kim, Soogil Kim, Jeongmyeong Kim
Estimating the term…
An electronic device may include a semiconductor memory, and the semiconductor memory may include a substrate; a magnetic tunnel junction (MTJ) structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer; and an interface layer and a damping constant enhancing layer interposed between the tunnel barrier layer and the pinned layer, wherein the interface layer may be structured to reduce metal diffusion and the damping constant enhancing layer includes a material having a relatively high damping constant to suppress switching of the magnetization direction of the pinned layer.
An electronic device comprising a semiconductor memory, wherein the semiconductor memory includes:
An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:
Dependencies are inferred from the claim text.