Back to results
US 11,145,806 B2Granted
Magnetic tunnel junction with reduced damage
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCarlos H. Diaz, Harry-Hak-Lay Chuang, Ru-Liang Lee
Life of this patent
Estimating the term…
Abstract
A device includes a plurality of bottom electrode features, a plurality of Magnetic Tunnel Junction (MTJ) stacks formed on top surfaces of the bottom electrode features, top electrode features formed on top of the MTJ stacks, and an etch stop layer extending along side surfaces of the bottom electrode feature and partially along side surfaces of the MTJ stacks.
Claims20
A device comprising:
- a plurality of bottom electrode features;
- a plurality of Magnetic Tunnel Junction (MTJ) stacks formed on top surfaces of the bottom electrode features;
- top electrode features formed on top of the MTJ stacks;
- and
- an etch stop layer extending along side surfaces of the bottom electrode feature and partially along side surfaces of the MTJ stacks.
2 more elements
A device comprising:
- a plurality of bottom electrode features;
- a plurality of Magnetic Tunnel Junction (MTJ) stacks formed on top surfaces of the bottom electrode features;
- and
- side spacers formed on side surfaces of the MTJ stacks;
- and
- an etch stop layer extending along side surfaces of the bottom electrode feature and partially along the side spacers.
3 more elements
A device comprising:
- a substrate;
- a dielectric layer formed on the substrate;
- a plurality of bottom electrode features formed over the dielectric layer;
- a plurality of Magnetic Tunnel Junction (MTJ) stacks formed on top surfaces of the bottom electrode features, the MTJ stacks having a smaller width than the bottom electrode features;
- and
- an etch stop layer extending along side surfaces of the bottom electrode feature and partially along side surfaces of the MTJ stacks.
3 more elements
Dependencies are inferred from the claim text.