Light-emitting device
AssigneeEpistar Corporation
InventorsShih-Chang Lee, Meng-Yang Chen
Life of this patent
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Abstract
A light-emitting device is provided, which includes a first semiconductor structure, an active structure, a second semiconductor structure, and a first blocking layer. The first semiconductor structure has a first conductivity type. The active structure is on the first semiconductor structure and has a first dopant. The second semiconductor structure is on the active structure and has a second conductivity type different from the first conductivity type. The first blocking layer is between the second semiconductor structure and the active structure. The first blocking layer has the first dopant with a first doping concentration decreasing along a depth direction from the second semiconductor structure to the first semiconductor structure.
Claims20
A light-emitting device, comprising:
- a first semiconductor structure having a first conductivity type;
- an active structure on the first semiconductor structure and having a first dopant;
- a second semiconductor structure on the active structure and having a second conductivity type different from the first conductivity type;
- and
- a first blocking layer between the second semiconductor structure and the active structure, wherein the first blocking layer has the first dopant with a first doping concentration decreasing along a depth direction from the second semiconductor structure to the first semiconductor structure.
A light-emitting device, comprising:
- a first semiconductor structure having a first conductivity type;
- an active structure on the first semiconductor structure and having a first dopant;
- and
- a second semiconductor structure on the active structure, having a second conductivity type different from the first conductivity type and having the first dopant;
- wherein the first semiconductor structure and the second semiconductor structure respectively include a semiconductor material containing arsenic (As) or phosphorus (P), and the first dopant has a doping concentration less than 1017 cm−3in the active structure.
Dependencies are inferred from the claim text.