Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting device comprising:

• a stacked body including a first semiconductor layer of a first conductivity type, a light emitting layer provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer, the stacked body including a first protrusion on an upper surface of the stacked body, the first protrusion protruding in a first direction from the first semiconductor layer to the light emitting layer, length of the first protrusion in a second direction perpendicular to the first direction decreasing toward the first direction, and the first protrusion including:
• a first portion having a first side surface inclined with respect to the first direction;
• and
• a second portion provided below the first portion and having a second side surface inclined with respect to the first direction, the second side surface being curved so as to be convex downward,
• the stacked body further including an undoped third semiconductor layer provided on the second semiconductor layer,
• the first protrusion being formed on an upper surface of the third semiconductor layer.

A semiconductor light emitting device comprising:

• a stacked body including a first semiconductor layer of a first conductivity type, a light emitting layer provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer, the stacked body including a first protrusion on an upper surface of the stacked body, the first protrusion protruding in a first direction from the first semiconductor layer to the light emitting layer, length of the first protrusion in a second direction perpendicular to the first direction decreasing toward the first direction, and the first protrusion including:
• a first portion having a first side surface inclined with respect to the first direction;
• and
• a second portion provided below the first portion and having a second side surface inclined with respect to the first direction, the second side surface being curved so as to be convex downward,
• the stacked body further including an undoped third semiconductor layer provided on the second semiconductor layer,
• at least part of the first portion being at least part of the third semiconductor layer.