Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component

An optoelectronic semiconductor component having

• a semiconductor layer sequence comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type and an active layer designed for generating electromagnetic radiation, wherein the active layer is disposed between the first semiconductor layer and the second semiconductor layer,
• a first electrical terminal layer and a second electrical terminal layer laterally spaced from the first electrical terminal layer and electrically contacting the active layer,
• a first contact zone of a second conductivity type adjacent to the first electrical terminal layer and electrically conductively connected to the first electrical terminal layer,
• at least one functional region formed between the first electrical terminal layer and the second electrical terminal layer, in which a second contact zone of a second conductivity type and at least one shielding zone of a second conductivity type are formed, wherein
• the second contact zone adjoins an electrical connection layer and is electrically conductively connected to the electrical connection layer,
• the electrical connection layer extends outside the semiconductor layer sequence and contacts the second semiconductor layer (102) in an electrical connection region, and
• the shielding zone is disposed between the second contact zone and the electrical connection region and is electrically insulated from the electrical connection layer, and
• the first contact zone, the second contact zone and the shielding zone extend from the second semiconductor layer to the first semiconductor layer and penetrate completely through the active layer.