Single photon avalanche gate sensor device
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorFrancois Roy
Life of this patent
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Abstract
A semiconductor substrate doped with a first doping type is positioned adjacent an insulated gate electrode that is biased by a gate voltage. A first region within the semiconductor substrate is doped with the first doping type and biased with a bias voltage. A second region within the semiconductor substrate is doped with a second doping type that is opposite the first doping type. Voltage application produces an electrostatic field within the semiconductor substrate causing the formation of a fully depleted region within the semiconductor substrate. The fully depleted region responds to absorption of a photon with an avalanche multiplication that produces charges that are collected at the first and second regions.
Claims19
A photosensor, comprising:
- a semiconductor layer doped with a first doping type and having a first surface and a second surface opposite the first surface;
- a first electrode insulated from and adjacent to the first surface of the semiconductor layer;
- a second electrode insulated from and adjacent to the second surface of the semiconductor layer;
- wherein the first and second electrodes are configured to be biased by a voltage to produce an electrostatic field within the semiconductor layer causing the formation of a depletion region within the semiconductor layer, said depletion region responding to absorption of a photon with an avalanche multiplication.
A photosensor, comprising:
- a conductive layer;
- a semiconductor on insulator (SOI) substrate including:
- a buried insulator layer in contact with a top of the conductive layer;
- and a semiconductor layer in contact with a top of the buried insulator layer;
- an insulated gate electrode adjacent a top surface of said semiconductor layer;
- wherein the conductive layer and insulated gate electrode are electrically connected to each other to receive a first voltage which produces an electrostatic field within the semiconductor layer causing the formation of a depletion region within the semiconductor layer;
- and
- a doped region within the semiconductor layer that is configured to collect charges generated by an avalanche multiplication produced in response to said depletion region absorbing a photon.
Dependencies are inferred from the claim text.