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US 11,145,779 B2Granted
Germanium photodiode
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsCharles Baudot, Sebastien Cremer, Nathalie Vulliet, Denis Pellissier-Tanon
Life of this patent
Estimating the term…
Abstract
A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.
Claims52
A photodiode configured to receive light for detection, comprising:
- a silicon layer having a lower surface and an upper surface and further including a cavity extending into the silicon layer from the upper surface, said cavity having opposed side walls;
- and
- an active area comprising a germanium region within the cavity, wherein the germanium region is in contact with the opposed side walls of the cavity, and wherein an angle between a direction orthogonal to a plane of said lower surface and a plane of each of the opposed side walls is greater than approximately 10°;
- wherein said light propagates in a direction parallel to the opposed side walls of the cavity.
1 more element
An opto-electric converter, comprising:
- a photodiode, wherein the photodiode comprises:
- a silicon layer having a lower surface and an upper surface and further including a cavity extending into the silicon layer from the upper surface, said cavity having opposed side walls;
- and
- an active area comprising a germanium region within the cavity, wherein the germanium region is in contact with the opposed side walls of the cavity, and wherein an angle between a direction orthogonal to a plane of said lower surface and a plane of the opposed side walls is greater than approximately 10°;
- and
- a waveguide configured to propagate light to the active area;
- wherein said light propagates in a direction parallel to the opposed side walls of the cavity.
4 more elements
A photodiode, comprising:
- a silicon layer having a lower surface and an upper surface and further including a cavity extending into the silicon layer from the upper surface, said cavity having opposed side walls;
- an active area comprising a germanium region within the cavity, wherein the germanium region is in contact with the opposed side walls of the cavity, and wherein an angle between a direction orthogonal to a plane of said lower surface and a plane of each of the opposed side walls is greater than approximately 10°;
- a first doped region within the silicon layer adjacent a first one of the opposed side walls, said first doped region being doped with a first conductivity type dopant;
- and
- a second doped region within the silicon layer adjacent a second one of the opposed side walls, said second doped region being doped with a second conductivity type dopant.
2 more elements
An opto-electric converter, comprising:
- a photodiode, wherein the photodiode comprises:
- a silicon layer having a lower surface and an upper surface and further including a cavity extending into the silicon layer from the upper surface, said cavity having opposed side walls;
- and
- an active area comprising a germanium region within the cavity, wherein the germanium region is in contact with the opposed side walls of the cavity, and wherein an angle between a direction orthogonal to a plane of said lower surface and a plane of the opposed side walls is greater than approximately 10°;
- a first doped region within the silicon layer adjacent a first one of the opposed side walls, said first doped region being doped with a first conductivity type dopant;
- and
- a second doped region within the silicon layer adjacent a second one of the opposed side walls, said second doped region being doped with a second conductivity type dopant;
- a waveguide configured to propagate light to the active area, wherein said waveguide comprises trenches of an insulating material delimiting an area of the silicon layer, said area configured to receive said light;
- and
- electrical contacts for the first and second doped regions which are located on corresponding first and second portions of the silicon layer separated from said area by said trenches of insulating material.
7 more elements
A photodiode, comprising:
- an insulating layer having an upper surface;
- a silicon layer having an upper surface and a lower surface;
- wherein the lower surface of the silicon layer is in contact with the upper surface of the insulating layer;
- wherein the silicon layer further includes a cavity extending completely through the silicon layer to the upper surface to the insulating layer, said cavity having opposed side walls;
- and
- an active area comprising a germanium region within the cavity, wherein the germanium region is in contact with the opposed side walls of the cavity and the upper surface of the insulating layer, and wherein an angle between a direction orthogonal to a plane of said lower surface and a plane of each of the opposed side walls is greater than approximately 10°.
3 more elements
Dependencies are inferred from the claim text.