Configurable solar cells

A system of photovoltaic devices comprising:

• a plurality of wafers, each wafer of the plurality of wafers comprising:
• a continuous base semiconducting region having a constant conductivity throughout and having a majority charge carrier, wherein the continuous base semiconducting region extends in a plane;
• a first physically contiguous semiconducting region in contact with the continuous base semiconducting region, wherein the first physically contiguous semiconducting region is doped so as to have an oppositely charged majority charge carrier as the continuous base semiconducting region, wherein the first physically contiguous semiconducting region extends parallel to the plane;
• at least two second physically contiguous semiconducting regions in contact with the continuous base semiconducting region, the at least two second physically contiguous semiconducting regions separated from one another by a first portion of the continuous base semiconducting region, wherein the at least two second physically contiguous semiconducting regions are doped to share the majority type carrier with the continuous base semiconducting region, wherein the at least two second physically contiguous semiconducting regions have a larger majority carrier concentration than the continuous base semiconducting region, wherein the at least two physically contiguous semiconducting regions extend parallel to the plane;
• wherein a first photovoltaic device is formed on the wafer by:
• a second portion of the continuous base semiconducting region;
• a first portion of the first physically contiguous semiconducting region;
• the first of the at least two second physically contiguous semiconducting regions;
• and further includes:
• a first conductive layer in electrical contact with the first portion of the first physically contiguous semiconducting region;
• a second conductive layer in electrical contact with the first of the at least two second physically contiguous semiconducting regions,
• and wherein a second photovoltaic device is formed on the wafer by:
• a third portion of the continuous base semiconducting region;
• a second portion of the first physically contiguous semiconducting region;
• the second of the at least two second physically contiguous semiconducting regions;
• and further includes:
• a third conductive layer in electrical contact with the second portion of the first physically contiguous semiconducting region;
• a fourth conductive layer in electrical contact with the second of the at least two second physically contiguous semiconducting regions;
• and
• wherein the first conductive layer and the third conductive layer are separated from each other by a first width so that the first conductive layer and the third conductive layer are not in direct physical contact;
• wherein the second conductive layer and the fourth conductive layer are separated from each other by a second width so that the second conductive layer and the fourth conductive layer are not in direct physical contact, and wherein the second width is aligned to the first width along an axis orthogonal to the plane;
• a first interconnect, wherein the first interconnect connects the first conductive layer on a first wafer of the plurality of wafers with the second conductive layer on a second wafer of the plurality of wafers;
• and
• a second interconnect, wherein the second interconnect connects the third conductive layer on the first wafer with the fourth conductive layer on the second wafer.