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US 11,145,772 B2Granted
Device for photo spectroscopy having an atomic-scale bilayer
AssigneeAT&T Intellectual Property I, L.P.
InventorsYevgeniy Puzyrev, Sheldon Kent Meredith, William C. Cottrill
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Abstract
Aspects of the subject disclosure may include, for example, a photodetecting device that includes a bottom gate, a bilayer semiconductor formed on the bottom gate, and a top gate above the bilayer semiconductor comprising a polymer electrolyte. Other embodiments are disclosed.
Claims20
A device, comprising:
- a bottom gate;
- a bilayer semiconductor formed directly on the bottom gate;
- and
- a top gate above the bilayer semiconductor comprising a solid polymer electrolyte.
1 more element
A photodetector device, comprising:
- a bottom gate comprising lithium fluoride;
- a bilayer semiconductor formed directly on the bottom gate comprising a thickness of two atoms, wherein the bilayer semiconductor comprises one or more of molybdenum disulfide, tungsten ditelluride, titanium selenide, titanium sulfide, zirconium selenide, and molybdenum tungsten selenide;
- a top gate above the bilayer semiconductor comprising a solid polymer electrolyte;
- and
- an electrical source that facilitates an electric field applied to the top gate and the bottom gate, wherein the electric field is between 0 and 1 V/nm.
2 more elements
A photodetector device, comprising:
- a bottom gate comprising lithium fluoride;
- a bilayer semiconductor formed directly on the bottom gate comprising one or more of molybdenum disulfide, tungsten ditelluride, titanium selenide, titanium sulfide, zirconium selenide, and molybdenum tungsten selenide;
- a top gate above the bilayer semiconductor comprising a solid polymer electrolyte;
- and
- an electrical source that facilitates an electric field applied to the top gate and the bottom gate.
2 more elements
Dependencies are inferred from the claim text.