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US 11,145,767 B2Granted
Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiao-Tsung Yen, Yu-Ling Lin, Chin-Wei Kuo, Ho-Hsiang Chen, Chewn-Pu Jou, Min-Chie Jeng
Life of this patent
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a floating substrate; and a capacitor grounded and connected to the floating substrate. A method of manufacturing a semiconductor structure is also provided.
Claims20
A method, comprising:
- providing a semiconductor structure comprising at least one capacitor partially formed over a floating substrate, at least one through-silicon-via (TSV) penetrating the floating substrate;
- and
- coupling a first metal layer of the capacitor to a grounded second metal layer to discharge a noise signal that is provided by the TSV to the floating substrate when an integrated circuit (IC) including the semiconductor structure is operated at a radio frequency, wherein the grounded second metal layer is coupled to the first metal layer by a conductive via structure.
A method to operate a semiconductor structure, comprising:
- identifying a coupled capacitor that generates a noise signal;
- and
- grounding a formed capacitor to discharge therethrough the noise signal, wherein the formed capacitor is provided by a semiconductor layer disposed over a floating substrate, a first metal layer, and a first dielectric layer disposed between the semiconductor layer and metal layer;
- and
- coupling the first metal layer to a grounded second metal layer with conductive via structure that extends from the first metal layer to the grounded second metal layer.
2 more elements
A method, comprising:
- providing a semiconductor structure comprising a floating substrate with a semiconductor layer formed thereover, a capacitor formed by the semiconductor layer, a first metal layer, and a first dielectric layer disposed between the semiconductor layer and first metal layer, a through-silicon-via (TSV) penetrating the floating substrate, and an electrical device disposed between the capacitor and the TSV;
- coupling the first metal layer of the capacitor to a grounded second metal layer to discharge a noise signal that is induced by a liner structure of the TSV and provided to the floating substrate when an integrated circuit (IC) including the semiconductor structure is operated at a radio frequency, wherein the first metal layer is coupled to the grounded second metal layer by a conductive via structure that extends between the first metal layer and the grounded second metal layer.
Dependencies are inferred from the claim text.