Vertical switching device with self-aligned contact

An integrated circuit device comprising:

• a substrate;
• a first layer on the substrate, the first layer including a metal;
• a second layer on the first layer, the second layer including the metal;
• a switching device between the first and second layers, the switching device comprising a source, a channel, a drain, and a gate;
• and
• first, second, and third dielectric portions;
• wherein (a) a first vertical axis intersects the substrate, the first layer, the second layer, the source, the channel, and the drain;
• (b) the first dielectric portion surrounds the source in a first plane;
• (c) the second dielectric portion surrounds the channel in a second plane;
• (d) the third dielectric portion surrounds the drain in a third plane;
• (e) a second vertical axis intersects the first, second, and third dielectric portions;
• (f) the first, second, and third planes are orthogonal to the first vertical axis, (g) the source includes a first dopant, the first dielectric portion includes the first dopant, the second dielectric portion includes at least one of the first dopant and a second dopant, the drain includes the at least one of the first and second dopants, and the third dielectric portion includes the at least one of the first and second dopants, and (h) none of first, second, or third dielectric portions include a gate dielectric.