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US 11,145,762 B2Granted
Multi-gate device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHuan-Sheng Wei, Hung-Li Chiang, Chia-Wen Liu, Yi-Ming Sheu, Zhiqiang Wu, Chung-Cheng Wu, Ying-Keung Leung
Life of this patent
Estimating the term…
Abstract
A multi-gate semiconductor device having a fin element, a gate structure over the fin element, an epitaxial source/drain feature adjacent the fin element; a dielectric spacer interposing the gate structure and the epitaxial source/drain feature.
Claims20
A multi-gate semiconductor device, comprising:
- a first layer having a first composition, the first layer extending from a source/drain region of the first layer to a channel region of the first layer;
- a second layer having the first composition, the second layer extending from a source/drain region of the second layer to a channel region of the second layer and spaced above the first layer;
- a gate structure interposed between the channel region of the first layer and the channel region of the second layer;
- an epitaxial layer having a second composition interposing the source/drain region of the first layer and the source drain region of the second layer;
- and
- a dielectric material disposed between the first layer and the second layer, the dielectric material interposing the gate structure and the epitaxial layer.
3 more elements
A multi-gate semiconductor device, comprising:
- a first silicon layer extending from a source/drain region of the first silicon layer to a channel region of the first silicon layer;
- a second silicon layer extending from a source/drain region of the second silicon layer to a channel region of the second silicon layer and spaced above the first silicon layer;
- a gate structure interposed between the channel region of the first silicon layer and the channel region of the second silicon layer;
- an epitaxial layer having a second composition interposing the source/drain region of the first silicon layer and the source/drain region of the second silicon layer;
- and
- a dielectric material disposed between the first silicon layer and the second silicon layer, the dielectric material interposing the gate structure and the epitaxial layer.
3 more elements
A multi-gate semiconductor device, comprising:
- a first layer having a first composition, the first layer extending from a source/drain region of the first layer to a channel region of the first layer;
- a second layer having the first composition, the second layer extending from a source/drain region of the second layer to a channel region of the second layer and spaced above the first layer;
- a gate structure interposed between the channel region of the first layer and the channel region of the second layer;
- an epitaxial layer having a second composition extending from a bottom surface of the first layer in the source/drain region of the first layer to a top surface of the second layer in the source/drain region of the second layer;
- and
- a dielectric material extending between the first layer and the second layer, the dielectric material interposing the gate structure and the epitaxial layer.
3 more elements
Dependencies are inferred from the claim text.