Gate extraction and injection field effect transistors and method for controlling its channel carrier amount

A method of controlling number of carriers in a channel semiconductor region of a field effect transistor, wherein, the field effect transistor comprises the channel semiconductor region arranged on an insulating layer;

• a source and a drain arranged on the channel semiconductor region and directly connected with the channel semiconductor region;
• a gate arranged between the source and the drain;
• a gate dielectric layer arranged between the gate and the channel semiconductor region;
• wherein, the gate dielectric layer is a thin film material with a resistance value of 103 1016Ω;
• and the channel semiconductor region is a two-dimensional semiconductor or a three-dimensional semiconductor with two-dimensional semiconductor material characteristics;
• the method comprises:
• applying a first gate voltage with an opposite polar to a charge of the channel carriers, and taking out the carriers in the channel;
• and
• applying a second gate voltage with a polarity opposite to the first gate voltage to inject the carriers into the channel;
• wherein the number of injected carriers from the gate is controlled by an absolute value of the second gate voltage.