US 11,145,753 B2 · Ballistic transport semiconductor device based on nano array and manufacturing method

Abstract

The present disclosure discloses a ballistic transport semiconductor device based on nano array and a manufacturing method thereof. The ballistic transport semiconductor device based on nano array comprises a conducting substrate, more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and the height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier. The carrier is not influenced by various scattering mechanisms in a transporting procedure by virtue of the existence of ballistic transport characteristics, thereby obtaining a semiconductor device having advantages of lower on resistance, less working power consumption.

Claims13

Dependent claims

A ballistic transport semiconductor device based on nano array, comprising a conducting substrate, wherein more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and a height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier;

wherein the ballistic transport semiconductor device based on nano array further comprises a nano bump portion array formed by a plurality of semiconductor nano bump portions which are distributed at intervals,
wherein a bottom end of the semiconductor nano bump portion and the first surface of the conducting substrate form ohmic contact while a top end thereof and the first electrode form Schottky contact;
and/or the second surface of the conducting substrate and the second electrode form the ohmic contact;
and/or the first electrode is an anode, and the second electrode is a cathode.

1 more element

A manufacturing method of a ballistic transport semiconductor device based on nano array, comprising:

arranging at least one semiconductor nano bump portion on a first surface of a conducting substrate, and electrically connecting the semiconductor nano bump portion and the first surface of the conducting substrate, wherein a height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier;
manufacturing a first electrode, and electrically connecting the semiconductor nano bump portion and the first electrode;
and
manufacturing a second electrode, and electrically connecting the second electrode and a second surface of the conducting substrate, wherein the first surface and the second surface are arranged back to back;
wherein a bottom end of the semiconductor nano bump portion and the first surface of the conducting substrate form ohmic contact while a top end thereof and the first electrode form Schottky contact;
and/or the second surface of the conducting substrate and the second electrode form the ohmic contact;
and/or the first electrode is an anode, and the second electrode is a cathode.

4 more elements

Dependencies are inferred from the claim text.

Ballistic transport semiconductor device based on nano array and manufacturing method

Life of this patent

Ballistic transport semiconductor device based on nano array and manufacturing method

Life of this patent

Abstract

Claims13