Semiconductor structure with doped contact plug and method for forming the same

A semiconductor structure, comprising:

• a gate structure over a fin structure;
• a source/drain structure in the fin structure and adjacent to the gate structure;
• a source/drain silicide layer on the source/drain structure;
• a contact plug over the source/drain structure;
• and
• a glue layer covering a bottom surface and a sidewall surface of the contact plug,
• wherein the contact plug comprises a metal doped with a non-metal dopant comprising one of group III elements, group IV elements, group V elements, or a combination thereof, wherein the glue layer is in contact with the source/drain silicide layer.

A semiconductor structure, comprising:

• a gate structure on a fin structure;
• a source/drain structure on the fin structure and adjacent to the gate structure;
• a source/drain silicide layer on the source/drain structure;
• a dielectric layer covering the gate structure and the source/drain structure;
• a contact plug in the dielectric structure and over the source/drain silicide layer;
• a glue layer covering a bottom surface and a sidewall surface of the contact plug, wherein a hardness of a top portion of the contact plug is greater than a hardness of a bottom portion of the contact plug in contact with the source/drain silicide layer, and a bottom surface of the glue layer is lower than a top surface of the source/drain structure, wherein the contact plug comprises a metal doped with a non-metal dopant, and the contact plug comprises a first metal compound, and a concentration of the first metal compound in the top portion of the contact plug is higher than a concentration of the first metal compound in the bottom portion of the contact plug.