Method of fabricating a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chen Lo, Yu-Lien Huang, Li-Te Lin
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device includes forming a gate electrode structure over a first region of a semiconductor substrate, and selectively forming an oxide layer overlying the gate electrode structure by reacting a halide compound with oxygen to increase a height of the gate electrode structure. The halide compound may be silicon tetrachloride, and the oxide layer may be silicon dioxide. The gate electrode structure may be a dummy gate electrode, which is subsequently removed, and replaced with another gate electrode structure.
Claims20
A method for fabricating a semiconductor device, comprising:
- forming a gate electrode structure over a first region of a semiconductor substrate;
- wherein the forming the gate electrode structure comprises:
- forming a sacrificial gate dielectric layer overlying the substrate;
- forming a sacrificial gate electrode layer overlying the sacrificial gate dielectric layer;
- forming a hard mask layer overlying the sacrificial gate electrode layer;
- patterning the hard mask layer to form a patterned hard mask;
- removing portions of the sacrificial gate electrode layer and sacrificial gate dielectric layer not covered by the patterned hard mask;
- and
- removing the patterned hard mask;
- selectively forming a first oxide layer overlying the sacrificial gate electrode layer by reacting a halide compound with oxygen to increase a height of the sacrificial gate electrode layer;
- forming source/drain regions on second regions of the semiconductor substrate, wherein the second regions of the semiconductor substrate are on opposing sides of the sacrificial gate electrode layer;
- forming an interlayer dielectric layer over the gate electrode structure and the source/drain regions;
- removing the first oxide layer, the interlayer dielectric layer over the first oxide layer, the sacrificial gate dielectric layer, and the sacrificial gate electrode layer to create a gate space;
- forming a gate dielectric layer in the gate space;
- forming a gate electrode layer over the gate dielectric layer in the gate space;
- and
- forming a second oxide layer over a remaining portion of the interlayer dielectric layer surrounding the gate electrode layer without substantially forming the second oxide layer on the gate electrode layer.
A method for fabricating a semiconductor device, comprising:
- forming a fin structure over a semiconductor substrate, wherein the fin structure extends in a first direction;
- forming a gate electrode structure over the fin structure, wherein the gate electrode structure extends in a second direction substantially perpendicular to the first direction, and sidewalls of the gate electrode structure are surrounded by a first insulating layer;
- forming a second insulating layer over the gate electrode structure;
- forming an oxide layer overlying the first insulating layer by reacting a halide compound with oxygen to increase a height of the first insulating layer without substantially forming an oxide layer over the second insulating layer;
- forming a first via in the second insulating layer exposing the gate electrode structure;
- and
- depositing a conductive material in the first via to form a gate electrode contact.
A method for fabricating a semiconductor device, comprising:
- forming a fin structure over semiconductor substrate, wherein the fin structure extend in a first direction;
- forming a gate electrode structure over a first region of the fin structure, wherein the gate electrode structure extends in a second direction substantially perpendicular to the first direction, and sidewalls of the gate electrode structure are surrounded by a first interlayer dielectric layer;
- recessing the metal gate electrode layer to form a recessed metal gate electrode layer;
- forming an insulating layer over the recessed metal gate electrode layer;
- recessing the insulating layer;
- and
- forming an oxide layer overlying the first interlayer dielectric layer by reacting a halide compound with oxygen to increase a height of the first interlayer dielectric layer without substantially forming an oxide layer over the insulating layer.
Dependencies are inferred from the claim text.