Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Co.y, Ltd.
InventorsWen-Ju Chen, Chung-Ting Ko, Chi On Chui
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Abstract
A method of manufacturing a semiconductor device includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, and forming a sacrificial film over the first semiconductor layer and the second semiconductor layer. The sacrificial film fills an area between the first semiconductor layer and the second semiconductor layer. The method further includes forming a space in the sacrificial film between the first semiconductor layer and the second semiconductor layer and removing the sacrificial film.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a multi-layer stack in a channel region, the multi-layer stack comprising alternating layers of a first plurality of layers and a second plurality of layers, the first plurality of layers comprising a first semiconductor material, the second plurality of layers comprising a second semiconductor material;
- removing the second plurality of layers from the multi-layer stack, the remaining first plurality of layers comprising a first semiconductor layer of the first semiconductor material and a second semiconductor layer of the first semiconductor material;
- forming a sacrificial film over the first semiconductor layer and the second semiconductor layer, the sacrificial film filling an area between the first semiconductor layer and the second semiconductor layer;
- forming a space in the sacrificial film between the first semiconductor layer and the second semiconductor layer;
- removing the sacrificial film;
- and
- forming a gate stack over the channel region.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first multi-layer stack in a first area over a substrate and a second multi-layer stack in a second area over the substrate, the first multi-layer stack comprising respective layers of second semiconductor layers, the second multi-layer stack comprising respective layers of first semiconductor layers;
- forming and removing a sacrificial film, wherein the forming and removing the sacrificial film comprises:
- depositing the sacrificial film over the first multi-layer stack and the second multi-layer stack, wherein the sacrificial film fills first gaps between respective second semiconductor layers of the first multi-layer stack and fills second gaps between respective second semiconductor layers of the first multi-layer stack;
- forming a first plurality of spaces in the sacrificial film between respective second semiconductor layers of the first multi-layer stack and forming a second plurality of spaces between respective first semiconductor layers of the second multi-layer stack;
- forming a mask layer over the sacrificial film;
- patterning and removing the mask layer in the first area;
- removing the sacrificial film over the first multi-layer stack;
- removing the mask layer in the second area;
- and
- removing the sacrificial film over the second multi-layer stack;
- and
- forming respective gate electrodes over the first multi-layer stack and the second multi-layer stack.
A method of manufacturing a semiconductor device, the method comprising:
- forming a stack of semiconductor layers in a channel region;
- forming a gate dielectric around respective semiconductor layers of the stack of semiconductor layers;
- depositing a sacrificial layer over the stack of semiconductor layers, the sacrificial layer comprising Al2O3;
- forming air gaps in the sacrificial layer between the respective semiconductor layers of the stack of semiconductor layers;
- removing the sacrificial layer;
- and
- forming a work function tuning layer around the gate dielectric, the work function tuning layer comprising La or TiN, the work function tuning layer having remnants of Al2O3 from the sacrificial layer.
Dependencies are inferred from the claim text.