Method for producing a semiconductor component
AssigneeInfineon Technologies AG
InventorsTill Schloesser, Christian Kampen, Andreas Meiser
Life of this patent
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Abstract
A method for producing a semiconductor component includes: providing a semiconductor body having a first dopant of a first conductivity type; forming a first trench in the semiconductor body starting from a first side; filling the first trench with a semiconductor filler material; forming a superjunction structure by introducing a second dopant of a second conductivity type into the semiconductor body, the semiconductor filler material being doped with the second dopant; forming a second trench in the semiconductor body starting from the first side; and forming a trench structure in the second trench.
Claims21
A method for producing a semiconductor component, the method comprising:
- providing a semiconductor body having a first dopant of a first conductivity type;
- forming a first trench in the semiconductor body starting from a first side;
- filling the first trench with a semiconductor filler material;
- forming a superjunction structure by introducing a second dopant of a second conductivity type into the semiconductor body, the semiconductor filler material being doped with the second dopant;
- forming a second trench in the semiconductor body starting from the first side;
- and
- forming a trench structure in the second trench,
- wherein forming the trench structure comprises:
- lining the second trench with a dielectric structure which is configured at least partially as a gate dielectric;
- and
- forming a gate electrode material in the second trench.
A method for producing a semiconductor component, the method comprising:
- providing a semiconductor body having a first dopant of a first conductivity type;
- forming a first trench in the semiconductor body starting from a first side;
- filling the first trench with a semiconductor filler material;
- forming a superjunction structure by introducing a second dopant of a second conductivity type into the semiconductor body, the semiconductor filler material being doped with the second dopant;
- forming a second trench in the semiconductor body starting from the first side;
- and
- forming a trench structure in the second trench,
- wherein the first dopant is introduced into the semiconductor body by a plurality of ion implantations with different implantation energies,
- wherein a spacing of neighboring implantation peaks in a vertical direction lies in a range of 100 nm to 400 nm and/or a maximum implantation energy and a minimum implantation energy are selected such that a vertical spacing of the associated implantation peaks lies in a range of 1 μm to 3 μm.
A method for producing a semiconductor component, the method comprising:
- providing a semiconductor body having a first dopant of a first conductivity type;
- forming a first trench in the semiconductor body starting from a first side;
- filling the first trench with a semiconductor filler material;
- forming a superjunction structure by introducing a second dopant of a second conductivity type into the semiconductor body, the semiconductor filler material being doped with the second dopant;
- forming a second trench in the semiconductor body starting from the first side;
- and
- forming a trench structure in the second trench,
- wherein at least one of the first dopant and the second dopant is introduced fully without masking, through a surface of an active transistor cell area by a plurality of ion implantations with different implantation energies.
A method for producing a semiconductor component, the method comprising:
- providing a semiconductor body having a first dopant of a first conductivity type;
- forming a first trench in the semiconductor body starting from a first side;
- filling the first trench with a semiconductor filler material;
- forming a superjunction structure by introducing a second dopant of a second conductivity type into the semiconductor body, the semiconductor filler material being doped with the second dopant;
- forming a second trench in the semiconductor body starting from the first side;
- forming a trench structure in the second trench;
- and
- introducing carbon fully without masking, through a surface of an active transistor cell area by one or more ion implantations.
A method for producing a semiconductor component, the method comprising:
- providing a semiconductor body having a first dopant of a first conductivity type;
- forming a first trench in the semiconductor body starting from a first side;
- filling the first trench with a semiconductor filler material;
- forming a superjunction structure by introducing a second dopant of a second conductivity type into the semiconductor body, the semiconductor filler material being doped with the second dopant;
- forming a second trench in the semiconductor body starting from the first side;
- and
- forming a trench structure in the second trench,
- wherein the superjunction structure comprises a first region of the first conductivity type, in which there is partial compensation for the doping of the first dopant by the second dopant, and a neighboring second region of the second conductivity type, which comprises the semiconductor filler material and is doped with the second dopant,
- wherein a dose of the first dopant along a segment differs by at most 5% from a dose of the second dopant along the same segment, the segment passing fully through the first region and the second region in a first lateral direction.
Dependencies are inferred from the claim text.