Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor base substrate;
• and
• a memory transistor comprising:
• a well region formed in the semiconductor base substrate;
• a gate insulating film disposed on a surface of the semiconductor base substrate, the gate insulating film overlapping with the well region;
• a memory gate electrode disposed on the gate insulating film;
• a spacer film disposed on a sidewall surface of the memory gate electrode;
• a raised part disposed on the surface of the semiconductor base substrate, the raised part being adjacent to the spacer film;
• a first impurity region provided in the well region, but not provided in the raised part, the first impurity region being located directly below the spacer film;
• and
• a second impurity region provided in the raised part, but not provided in the well region formed in the semiconductor base substrate,
• wherein the gate insulating film includes:
• a first film disposed on the surface of the semiconductor base substrate;
• a second film disposed on the first film, the second film being served as a charge storage layer;
• and
• a third film disposed on the second film,
• wherein an impurity concentration of the second impurity region is higher than an impurity concentration of the first impurity region, and
• wherein the raised part has a surface located on a side of the gate insulating film relative to the surface of the semiconductor base substrate.