Process of forming nitride semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorTomohiro Yoshida
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Abstract
A process of forming a nitride semiconductor device is disclosed. The process includes steps of: (a) forming insulating films on a semiconductor stack, where the insulating films include a first silicon nitride (SiN) film, a silicon oxide (SiO2) film, and a second SiN film; (b) forming an opening in the insulating films; (c) widening the opening in the SiO2 film; (d) forming a recess in the semiconductor stack using the insulating films as a mask; (e) growing a doped region within the recess and simultaneously depositing the nitride semiconductor material constituting the doped region on the second SiN film; and (f) removing the nitride semiconductor material deposited on the second SiN film and the second SiN film by removing the SiO2 film.
Claims12
A process of forming a nitride semiconductor device, the process comprising steps of:
- forming insulating films on a top surface of a semiconductor stack, the insulating films including, from the top surface of the semiconductor stack, a first silicon nitride (SiN) film, a silicon oxide (SiO2) film, and a second SiN film;
- forming an opening in the insulating films to expose the top surface of the semiconductor stack;
- widening the opening formed in the SiO2 film;
- forming a recess in the semiconductor stack by using the insulating films as an etching mask;
- growing a doped region made of nitride semiconductor material within the recess, the growing of the doped region resulting in nitride semiconductor material being deposited on the second SiN film;
- and
- removing the nitride semiconductor material deposited on the second SiN film and the second SiN film by removing the SiO2 film.
Dependencies are inferred from the claim text.