Back to results
US 11,145,741 B2Granted
Bipolar transistor
AssigneesSTMicroelectronics (Grolles 2) SAS, STMicroelectronics S.r.l.
InventorsAlexis Gauthier, Pascal Chevalier
Life of this patent
Estimating the term…
Abstract
A bipolar transistor includes a collector. The collector is produced by a process wherein a first substantially homogeneously doped layer is formed at the bottom of a cavity. A second gradually doped layer is then formed by diffusion of dopants of the first substantially homogeneously doped layer.
Claims32
A method of manufacturing a bipolar transistor, comprising:
- forming a first cavity in a semiconductor substrate;
- depositing a semiconductor material layer in the first cavity, wherein said semiconductor material layer is substantially homogeneously doped;
- filling the first cavity with an insulating material to form an insulating trench over the semiconductor material layer;
- diffusing dopants from the semiconductor material layer into the semiconductor substrate to form a semiconductor region that is gradually doped, said semiconductor region forming a first portion of a collector;
- and
- forming a second portion of the collector from semiconductor material which crosses through the insulating trench and the first semiconductor material layer, wherein a bottom of the second portion of the collector is in physical contact with a top of the semiconductor region for the first portion of the collector.
3 more elements
A method of manufacturing a bipolar transistor, comprising:
- forming a first cavity in a semiconductor substrate;
- depositing a semiconductor material layer in the first cavity;
- filling the first cavity with an insulating material to form an insulating trench over the semiconductor material layer;
- diffusing dopants from the semiconductor material layer into the semiconductor substrate to form a first portion of a collector;
- filling the first cavity with an insulating material;
- and
- forming a second portion of the collector from semiconductor material which extends through the insulating material to contact a top of the first portion of the collector.
4 more elements
A method of manufacturing a bipolar transistor, comprising:
- forming a collector of said bipolar transistor by:
- forming a first layer doped in a substantially homogeneous manner at a bottom of a cavity provided in a substrate;
- and
- forming a second layer gradually doped by diffusion of dopants of the first layer into the substrate to produce a first portion of the collector;
- removing at least a part of the first layer to form an opening extending through the first layer to expose a top of the second layer;
- and
- placing a second portion of the collector in said opening in contact with the top of the second layer.
4 more elements
A method of manufacturing a bipolar transistor, comprising:
- forming a first cavity in a semiconductor substrate;
- forming a semiconductor material layer on sidewalls and a bottom of the first cavity;
- filling the first cavity with an insulating material to form an insulating trench over the semiconductor material layer;
- diffusing dopants from the semiconductor material layer into the semiconductor substrate to form a semiconductor region located underneath the semiconductor material layer that is gradually doped, said semiconductor region forming a first portion of a collector;
- forming a second cavity in, extending in depth completely through, and surrounded by portions of, the insulating material within said first cavity, said second cavity further extending in depth completely through said semiconductor material layer to said semiconductor region located underneath the semiconductor material layer;
- and
- forming a second portion of the collector from semiconductor material which fills the second cavity and is in physical contact with a top of the semiconductor region.
4 more elements
A method of manufacturing a bipolar transistor, comprising:
- forming a first cavity in a semiconductor substrate;
- depositing a semiconductor material layer in the first cavity;
- filling the first cavity with an insulating material to form an insulating trench over the semiconductor material layer;
- diffusing dopants from the semiconductor material layer into the semiconductor substrate underneath the semiconductor layer to form a first portion of a collector;
- filling the first cavity with an insulating material;
- forming a second cavity in, extending in depth completely through, and surrounded by portions of, the insulating material within said first cavity, said second cavity further extending in depth completely through said semiconductor material layer to said semiconductor region underneath the semiconductor material layer;
- and
- filling the second cavity with semiconductor material to form a second portion of the collector in contact with a top of the first portion of the collector.
5 more elements
A method of manufacturing a bipolar transistor, comprising:
- forming a collector of said bipolar transistor by:
- forming a first layer conformally lining side walls and a bottom of a cavity provided in a substrate;
- forming a second layer gradually doped by diffusion of dopants of the first layer into the substrate to produce a first portion of the collector located underneath the first layer;
- filling the cavity with an insulating material;
- removing part of the insulating material in the cavity and part of the first layer underneath the cavity to form an opening extending in depth completely through both the insulating material and the first layer to expose a top of the second layer;
- and
- filling the opening with semiconductor material to form a second portion of the collector in contact with the top of the second layer.
4 more elements
Dependencies are inferred from the claim text.