Ferroelectric field effect transistor device
AssigneeNational Tsing Hua University
InventorsYung-Chun Wu, Fu-Ju Hou, Meng-Ju Tsai
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Abstract
A ferroelectric field effect transistor (FeFET) device includes a semiconductor substrate and a 3D transistor. The 3D transistor includes drain and source electrodes; a channel structure that includes a channel body and a gate dielectric layer; and a gate electrode that is disposed on the gate dielectric layer and that is electrically isolated from the drain and source electrodes. The channel body is disposed between and connected to the drain and source electrodes. The gate dielectric layer covers the channel body, is made of crystalline hafnium zirconium oxide, and has a thickness ranging from 2 nm to 5 nm. The FeFET device has an on/off current ratio that is greater than 5×104.
Claims14
A ferroelectric field effect transistor (FeFET) device, comprising:
- a semiconductor substrate;
- and
- a three-dimensional transistor including:
- a drain electrode and a source electrode that are disposed on and extend in a direction away from said semiconductor substrate;
- a channel structure that includes a channel body and a gate dielectric layer, said channel body extending in the direction away from said semiconductor substrate and disposed between and connected to said drain electrode and said source electrode, said gate dielectric layer covering said channel body, and being made of crystalline hafnium zirconium oxide and having a thickness ranging from 2 nm to 5 nm;
- and
- a gate electrode that is disposed on said gate dielectric layer and that is electrically isolated from said drain electrode and said source electrode,
- wherein said ferroelectric FET device has an on/off current ratio that is greater than 5×104, and
- wherein said channel body is surrounded by said gate dielectric layer, and said gate electrode surrounds said gate dielectric layer so that said channel body is spaced apart from said semiconductor substrate in the direction away from said semiconductor substrate via said gate electrode.
Dependencies are inferred from the claim text.