Field effect transistors with a gated oxide semiconductor source/drain spacer
AssigneeIntel Corporation
InventorsGilbert W. Dewey, Rafael Rios, Van H. Le, Jack T. Kavalieros
Life of this patent
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Abstract
FETs including a gated oxide semiconductor spacer interfacing with a channel semiconductor. Transistors may incorporate a non-oxide channel semiconductor, and one or more oxide semiconductors disposed proximal to the transistor gate electrode and the source/drain semiconductor, or source/drain contact metal. In advantageous embodiments, the oxide semiconductor is to be gated by a voltage applied to the gate electrode (i.e., gate voltage) so as to switch the oxide semiconductor between insulating and semiconducting states in conjunction with gating the transistor's non-oxide channel semiconductor between on and off states.
Claims24
A transistor comprising:
- a source region and a drain region separated by a channel region comprising a semiconductor material;
- a gate stack over the channel region, the gate stack comprising a gate dielectric layer and at least one gate electrode layer;
- and
- a spacer adjacent to a side of the gate stack, the spacer comprising an oxide semiconductor.
A CMOS integrated circuit (IC), comprising:
- an n-type fin field effect transistor (finFET) over a first region of a substrate, the finFET further including:
- an n-type source semiconductor and an n-type drain semiconductor coupled to a channel semiconductor therebetween;
- a gate stack including a gate electrode and a gate dielectric over the channel semiconductor;
- and
- a spacer adjacent to a side of the gate stack, the spacer comprising an oxide semiconductor;
- and
- a p-type finFET over a second region of the substrate.
A method of fabricating a field effect transistor (FET), the method comprising:
- forming a channel semiconductor over a substrate;
- forming a gate stack over the channel semiconductor, the gate stack including a gate electrode and a gate dielectric;
- depositing an oxide semiconductor over the gate stack;
- etching the oxide semiconductor to retain an oxide semiconductor spacer adjacent to a sidewall of the gate stack;
- and
- forming a source semiconductor and a drain semiconductor over the substrate and adjacent to the oxide semiconductor spacer.
Dependencies are inferred from the claim text.