Back to results
US 11,145,737 B2Granted
Selector devices
AssigneeIntel Corporation
InventorsAbhishek A. Sharma, Ravi Pillarisetty, Van H. Le, Gilbert W. Dewey, Willy Rachmady
Life of this patent
Estimating the term…
Abstract
Disclosed herein are selector devices, and related devices and techniques. In some embodiments, a selector device may include a first electrode, a second electrode, a selector material between the first electrode and the second electrode, and a getter layer between the first electrode and the selector material. The first electrode may include a material having a work function that is less than 4.5 electron volts.
Claims20
A selector device, comprising:
- a first electrode, wherein the first electrode includes a material having a work function that is less than 4.5 electron volts;
- a second electrode;
- a selector material between the first electrode and the second electrode;
- and
- a getter layer between the first electrode and the selector material,
- wherein the selector material includes a chalcogenide or wherein the first electrode includes a skin layer of the material around the material.
3 more elements
A memory cell, comprising:
- a storage element;
- and
- a selector device coupled to the storage element, wherein:
- the selector device includes a first electrode, a second electrode, a selector material between the first electrode and the second electrode, and a getter layer between the second electrode and the selector material,
- the first electrode includes a first material having a work function less than 4.5 electron volts,
- the second electrode includes a second material having a work function greater than 4.5 electron volts, and
- the selector material includes a chalcogenide or the first electrode includes a skin layer of the material around another material.
4 more elements
A computing device, comprising:
- a circuit board;
- a processing device coupled to the circuit board;
- and
- a memory array coupled to the processing device, wherein:
- the memory array includes a memory cell having a storage element coupled in series with a selector device, the selector device includes a first electrode, a second electrode, and a selector material that includes a chalcogenide, and
- the first electrode includes a skin layer of a material having a work function less than 4.5 electron volts.
3 more elements
Dependencies are inferred from the claim text.