Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a substrate having a first fin structure and a second fin structure;
• a first gate structure over the first fin structure, wherein the first gate structure comprises a first high dielectric constant material and a first metal over the first high dielectric constant material;
• a plurality of first gate spacers on opposite sides of the first gate structure, wherein an entirety of the first gate spacers is separated from the first high dielectric constant material of the first gate structure by at least one material that is different than the first gate spacers;
• a second gate structure narrower than the first gate structure over the second fin structure, wherein the second gate structure comprises a second high dielectric constant material and a second metal over the second high dielectric constant material;
• and
• a plurality of second gate spacers on opposite sides of the second gate structure, wherein the second gate spacers are in contact with an upper portion of a sidewall of the second high dielectric constant material and is separated from a lower portion of the sidewall of the second high dielectric constant material.

A semiconductor device, comprising:

• a substrate having a first region and a second region;
• a first gate structure over the substrate within the first region, wherein the first gate structure comprises a first high dielectric constant material and a first metal over the first high dielectric constant material;
• a plurality of first gate spacers on opposite sides of the first gate structure;
• a second gate structure over the substrate within the second region, wherein the second gate structure comprises a second high dielectric constant material and a second metal over the second high dielectric constant material;
• a plurality of second gate spacers on opposite sides of the second gate structure, the second gate spacers being separated by a distance shorter than a distance separating the first gate spacers;
• a first dielectric layer extending from a position under one of the first gate spacers to a position below the first gate structure, wherein the first dielectric layer is below and in contact with bottom surfaces of the first gate spacers;
• and
• a second dielectric layer has a lateral portion and a vertical portion extending upwardly from an end of the lateral portion, wherein the vertical portion is laterally between the first gate spacers and the first gate structure, and the lateral portion is vertically between the first gate structure and the first dielectric layer.