Back to results
US 11,145,729 B2Granted
Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Feng Huang, Chia-Chung Chen, Victor Chiang Liang, Meng-Chang Ho, Chung-Hao Chu, Tz-Hau Guo
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a composite gate structure formed over a semiconductor substrate. The composite gate structure includes a gate dielectric layer, a metal layer, and a semiconductor layer. The metal layer is disposed on the gate dielectric layer. The semiconductor layer is disposed on the gate dielectric layer. The metal layer surrounds the semiconductor layer.
Claims20
A semiconductor device, comprising:
- a composite gate structure formed over a semiconductor substrate, wherein the composite gate structure comprises:
- a gate dielectric layer;
- metal layers disposed on the gate dielectric layer;
- and
- a semiconductor layer disposed on the gate dielectric layer, wherein the semiconductor layer is sandwiched between the metal layers in a direction perpendicular to a stacking direction of the substrate and the gate dielectric layer.
2 more elements
A semiconductor device, comprising:
- a composite gate structure formed over a semiconductor substrate, wherein the composite gate structure comprises:
- a gate dielectric layer;
- a metal layer disposed on the gate dielectric layer;
- and
- semiconductor layers disposed on the gate dielectric layer, wherein the metal layer is sandwiched between the semiconductor layers in a direction perpendicular a stacking direction of the substrate and the gate dielectric layer.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate, having a first region and a second region;
- a first metal-oxide-semiconductor (MOS) device disposed in the first region, wherein the first MOS device comprises a first composite gate structure formed over the semiconductor substrate and a pair of first source/drain on opposite sides of the first composite gate structure, the first composite gate structure comprises:
- a first gate dielectric layer;
- first metal layers disposed on the first gate dielectric layer;
- and
- a first semiconductor layer disposed on the first gate dielectric layer, wherein the first semiconductor layer is sandwiched between the first metal layers;
- a second metal-oxide-semiconductor (MOS) device disposed in the second region, wherein the second MOS device comprises a second composite gate structure formed over the semiconductor substrate and a pair of second source/drain on opposite sides of the second composite gate structure, the second composite gate structure comprises:
- a second gate dielectric layer;
- a second metal layer disposed on the second gate dielectric layer;
- and
- second semiconductor layers disposed on the second gate dielectric layer, wherein the second metal layer is sandwiched between the second semiconductor layers;
- and
- a dielectric layer formed aside the first MOS device and the second MOS device.
10 more elements
Dependencies are inferred from the claim text.