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US 11,145,727 B2Granted
Semiconductor structure and method of forming the same
AssigneeNanya Technology Corporation
InventorsSheng-Hwa Lee, Hsiu-Ming Chen
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Abstract
A semiconductor structure includes a pair of active regions, a first isolation structure, a gate structure, and a pair of contacts. The first isolation structure is disposed between the active regions. The gate structure is disposed on the first isolation structure. The contacts are respectively disposed on the active regions. Each of the contacts has a bottom surface and a sidewall substantially perpendicular to the bottom surface.
Claims12
A semiconductor structure, comprising:
- a pair of active regions, wherein each of the active regions has a top surface and a sidewall substantially perpendicular to the top surface;
- a first isolation structure between the active regions;
- a gate structure on the first isolation structure;
- and
- a pair of contacts respectively on the active regions, wherein each of the contacts has a bottom surface and a sidewall substantially perpendicular to the bottom surface.
2 more elements
Dependencies are inferred from the claim text.