Doped through-contact structures

A semiconductor structure, the semiconductor structure comprising:

• a substrate;
• a gate structure overlying the substrate and formed in a first direction across the substrate;
• a fin overlying the substrate and formed in a second direction across the substrate, wherein the second direction is orthogonal to the first direction, and wherein the fin intersects the gate structure;
• a source/drain material formed about the fin, the source/drain material characterized by sloped sidewalls extending to a point;
• a through-contact material overlying the source/drain material;
• a silicide material overlying the through-contact material;
• a liner material overlying the silicide material;
• and
• a contact metal overlying the liner material, wherein an interface between the metal material and the through-contact material is characterized by a non-planar profile.

A semiconductor structure, the semiconductor structure comprising:

• a substrate;
• a gate structure overlying the substrate and formed in a first direction across the substrate;
• a fin overlying the substrate and formed in a second direction across the substrate, wherein the second direction is orthogonal to the first direction, and wherein the fin intersects the gate structure;
• a source/drain material formed about the fin, the source/drain material characterized by sloped sidewalls extending to a point;
• a metal material extending vertically above the source/drain material;
• a through-contact material extending between the source/drain material and the metal material, wherein a first surface of the through-contact material extends along the sloped sidewalls of the source/drain material, wherein an interface between the metal material and the through-contact material is characterized by a non-planar profile;
• a silicide material extending in contact with a second surface of the through-contact material opposite the first surface;
• and
• a liner extending between the silicide material and the metal material.