Heterojunction bipolar transistor
AssigneeGlobalFoundries U.S. Inc.
InventorsQizhi Liu, Vibhor Jain, Judson R. Holt, Herbert Ho, Claude Ortolland, John J. Pekarik
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor and methods of manufacture. The structure includes: a sub-collector region; a collector region in electrical connection to the sub-collector region; an emitter located adjacent to the collector region and comprising emitter material, recessed sidewalls on the emitter material and an extension region extending at an upper portion of the emitter material above the recessed sidewalls; and an extrinsic base separated from the emitter by the recessed sidewalls.
Claims20
A structure comprising:
- a sub-collector region;
- a collector region in electrical connection to the sub-collector region;
- an intrinsic base;
- an emitter located adjacent to the collector region and above the intrinsic base, the emitter comprising emitter material, recessed sidewalls on the emitter material and an extension region extending at an upper portion of the emitter material above the recessed sidewalls;
- and
- an extrinsic base separated from the emitter by the recessed sidewalls.
A structure comprising:
- a sub-collector region;
- a collector region above the sub-collector region;
- a T-shaped emitter above the intrinsic base with a contact landing area on a top horizontal surface of the T-shaped emitter, wherein the T-shaped emitter comprises two different materials;
- and
- an extrinsic base under and adjacent to the T-shaped emitter and contacting the intrinsic base.
A method, comprising
- forming a collector region;
- forming an emitter above the collector region;
- forming recessed sidewall structures on sidewalls of the emitter such that an upper portion of the sidewalls of the emitter are exposed;
- and
- growing semiconductor material adjacent to the emitter and on the exposed sidewall of the emitter above the recessed sidewall structures to form an extrinsic base and extensions to the emitter resulting in a T-shaped emitter.
Dependencies are inferred from the claim text.