Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor device, comprising:

• a semiconductor substrate of a first conductivity type;
• a first semiconductor layer of the first conductivity type provided on a front surface of the semiconductor substrate and having a first side, and a second side opposite to the first side and facing the front surface of the semiconductor substrate, the first semiconductor layer having an impurity concentration lower than an impurity concentration of the semiconductor substrate;
• a second semiconductor layer of a second conductivity type selectively provided at a surface of the first side of the first semiconductor layer, the second semiconductor layer having a first side, and a second side opposite to the first side and facing the first side of the first semiconductor layer;
• a first semiconductor region of the first conductivity type selectively provided in a surface layer of the first side of the second semiconductor layer;
• a gate electrode including a first portion provided in a plurality of trenches via gate insulating films, the trenches being provided at the first side of the second semiconductor layer;
• a protruding portion disposed, on the second semiconductor layer, in a bridge area located between two adjacent ones of the trenches in a direction orthogonal to the trenches;
• an interlayer insulating film provided on the gate electrode, and having a plurality of contact holes, the contact holes forming a striped pattern and each exposing a part of the second semiconductor layer and a part of the first semiconductor region;
• a first electrode provided on the interlayer insulating film and in the contact holes;
• a plating film provided in a plating area on the first electrode;
• a solder on the plating film;
• and
• a second electrode provided on a rear surface of the semiconductor substrate, wherein an area on the interlayer insulating film corresponding to the plating area is free of the contact holes.