Semiconductor device

A semiconductor device, comprising:

• a substrate;
• a device isolation layer on the substrate, the device isolation layer defining an active pattern, and the active pattern extending in a first direction;
• a channel pattern on the active pattern, a top surface of the channel pattern being higher than a top surface of the device isolation layer;
• a source/drain pattern on the active pattern, the source/drain pattern including a region with a maximum first width in the first direction, and the source/drain pattern being in direct contact with the channel pattern;
• a gate electrode on the channel pattern and extends in a second direction intersecting the first direction;
• and
• an amorphous region in the active pattern, the amorphous region being below the source/drain pattern.

A semiconductor device, comprising:

• a substrate;
• a device isolation layer on the substrate, the device isolation layer defining an active pattern, and an upper portion of the active pattern vertically protruding above the device isolation layer;
• a pair of source/drain patterns on the upper portion of the active pattern, the pair of source/drain patterns being spaced apart from each other in a first direction;
• a channel pattern between the pair of source/drain patterns;
• a gate electrode on a top surface and opposite sidewalls of the channel pattern, the gate electrode extending in a second direction intersecting the first direction;
• a gate dielectric layer between the channel pattern and the gate electrode, the gate dielectric layer covering the top surface and the opposite sidewalls of the channel pattern;
• an active contact electrically connected to at least one of the pair of source/drain patterns, the at least one of the pair of source/drain patterns having a maximum first width in the first direction;
• and
• an amorphous region in the active pattern, the amorphous region being below the at least one of the pair of source/drain patterns, and having a maximum second width in the first direction that is less than the maximum first width.