Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsCho-eun Lee, Seok-hoon Kim, Sang-gil Lee, Edward Namkyu Cho, Min-hee Choi, Seung-hun Lee
Life of this patent
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Abstract
A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.
Claims19
A semiconductor device comprising:
- a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate;
- and
- a source/drain region in a recess region extending into the fin-type active region,
- wherein the source/drain region comprises:
- a first source/drain material layer;
- a second source/drain material layer on the first source/drain material layer;
- and
- a first dopant diffusion barrier layer including a dopant diffusion-preventing element on an interface between the first source/drain material layer and the second source/drain material layer,
- wherein a concentration of the dopant diffusion-preventing element in the first dopant diffusion barrier layer is at least twice a concentration of a same dopant in the first source/drain material layer.
A semiconductor device comprising:
- a first fin-type active region and a second fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate;
- and
- a source/drain region in a recess region extending into the first fin-type active region and the second fin-type active region, the source/drain region extending between the first fin-type active region and the second fin-type active region,
- wherein the source/drain region comprises at least one dopant diffusion barrier layer extending from the first fin-type active region to the second fin-type active region.
A semiconductor device comprising:
- a substrate having a channel region and a pair of recesses at two sides of the channel region;
- a gate insulating layer formed on the channel region;
- a gate structure formed on the gate insulating layer;
- and
- a source/drain region formed in the pair of recesses, wherein the source/drain region comprises:
- a first source/drain material layer;
- a second source/drain material layer on the first source/drain material layer;
- and
- a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer,
- wherein a concentration of the dopant diffusion-preventing element in the first dopant diffusion barrier layer is at least twice a concentration of a same dopant in the first source/drain material layer.
Dependencies are inferred from the claim text.