Semiconductor device with separate active region and method of fabricating the same

A semiconductor device, comprising:

• a substrate, comprising:
• a first active region;
• a second active region;
• and
• a plurality of separate active regions, extending along a first direction, arranged along a second direction, located between the first active region and the second active region, and respectively connected with the first active region and the second active region;
• a plurality of isolation islands, located in the substrate, wherein the isolation islands and the separate active regions are alternately disposed along the second direction;
• a gate structure, located on the substrate and comprising:
• a body portion, extending along the second direction and disposed on a portion of the first active region;
• a plurality of extensions, connected with the body portion and extending from the body portion to the isolation islands along the first direction, wherein the extensions and the separate active regions are alternately disposed along the second direction;
• a source region, located in the substrate in the first active region;
• and
• a drain region, located in the substrate in the second active region.